Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

Iterative Local Monte Carlo Technique for the Simulation of Si-mosfets

Monte Carlo Simulation Method

Quantum Monte Carlo (QMC) methods such as Variational Monte Carlo, Diffusion Monte Carlo or Path Integral Monte Carlo are the most accurate and general methods for computing total electronic energies. We will review methods we have developed to perform QMC for the electrons coupled to another MC simulation for the ions. In this method, one estimates the Born-Oppenheimer energy E(Z) where Z repr...

Monte Carlo Simulation and Measurement of Nanoscale n-MOSFETs

The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehensive secondary ion mass spectroscopy and capacitance–voltage measurements. Good agreement between the measured output characteristics and the full...

Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method

Source-to-drain tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo solver for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator Minimos-NT, and the contribution of the lowest subband is determined by the quantum transport simula...

Method of Moments Using Monte Carlo Simulation

We present a computational approach to the method of moments using Monte Carlo simulation. Simple algebraic identities are used so that all computations can be performed directly using simulation draws and computation of the derivative of the log-likelihood. We present a simple implementation using the Newton-Raphson algorithm, with the understanding that other optimization methods may be used ...